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57E6E 00600 TC115 Z5250 CQVP31 HSG1003 F5525 TC115
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  Datasheet File OCR Text:
 SMD Type
Medium Power Transistor 2SA1577
Transistors IC
Features
Large IC.ICMAX. = -500mA Low VCE(sat). Ideal for low-voltage operation.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -32 -5 -0.5 0.2 150 -55 to +150 Unit V V V A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC= -100iA IC= -1mA IE= -100iA VCB= -20V VEB= -4V Testconditons Min -40 -32 -5 -1 -1 -0.6 82 200 7 390 MHz pF Typ Max Unit V V V iA iA V
VCE(sat) VCE= -3V, IC= -100mA hFE fT Cob IC/IB= -300mA/-30mA VCE= -5V, IE=20mA, f=100MHz VCB= -10V, IE=0A, f=1MHz
hFE Classification
Marking hFE HP 82 180 HQ 120 270 HR 180 390
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